News
Nitride Global to Partner on NASA Phase 2 Contract to Grow Aluminum Nitride Crystals in Space
Industry leaders team up to develop next-generation crystal growth capability
Wichita, Kansas, USA — December 10, 2025 — Nitride Global, Inc., a global leader in Aluminum Nitride semiconductor materials and advanced packaging technologies, today announced that along with its partners, United Semiconductor, LLC and Axiom Space has been selected for a NASA-funded Small Business Innovation Research (SBIR) grant titled “Physical Vapor Deposition Reactor Design and Validation for In-Space Manufacturing of Aluminum Nitride Single Crystals.” The project will advance the development of a next-generation Physical Vapor Deposition (PVD) reactor for producing high-purity aluminum nitride (AlN) crystals in microgravity, a key step toward enabling large-scale space-based semiconductor manufacturing.
Aluminum nitride is an ultrawide bandgap semiconductor with superior thermal conductivity, operating temperature range, radiation resistance and electrical breakdown strength compared to silicon carbide (SiC) and gallium nitride (GaN). However, terrestrial AlN crystal growth faces challenges such as high dislocation densities, point defects, and size limitations that hinder its widespread adoption in high-performance power electronics and optoelectronic applications.
Microgravity provides a unique environment to overcome these barriers by:
Eliminating thermal convection, ensuring uniform mass flux and reducing defects
Minimizing thermal gradients, decreasing stress-induced dislocations
Accelerating seed development, enabling the production of ultra-high-purity AlN substrates that could advance wafer quality by multiple generations in months rather than decades
During Phase I, the project team—led by USLLC—successfully developed and tested a proof-of-concept PVD reactor capable of achieving crystal growth temperatures of 2800–3200°C while operating at only 250–400 watts and weighing less than 700 grams. The compact system demonstrated feasibility for integration within the International Space Station (ISS) environment, where power, size, and thermal constraints are significant.
In Phase II, the consortium will develop and validate a flight-ready reactor prototype for deployment aboard the ISS. Objectives include:
Refining reactor design to meet ISS middeck locker integration requirements
Conducting AlN crystal growth optimization through modeling and empirical testing
Completing NASA’s Safety Review and securing payload integration approval for future on-orbit experiments
The enhanced system will also serve as a high-temperature materials research platform, supporting studies of silicon carbide, oxide crystals, and other advanced materials relevant to in-space manufacturing and next-generation semiconductor technologies.
“This collaboration represents a major step toward realizing the vision of in-space semiconductor fabrication,” said Mahyar Khosravi, CEO of Nitride Global. “By harnessing the advantages of microgravity and advanced thermal systems engineering, we aim to help establish the U.S. as a leader in ultra-high-performance material production for both terrestrial and orbital applications.”
The project aligns with NASA’s broader goals of fostering sustainable, commercial in-space manufacturing, advancing R&D of aluminum nitride based semiconductors for extreme space environments, and leveraging low-Earth orbit (LEO) platforms such as the ISS and future Axiom Space stations to accelerate technology readiness for Earth and beyond.
About Nitride Global
Founded in 2021, Nitride Global (nitrideglobal.com) is an advanced materials innovator specializing in ultrawide bandgap materials with its ultra-high-purity aluminum nitride boules, and advanced packaging solutions with its revolutionary and patented aluminum oxynitride technology. Its cutting-edge solutions are designed to enable the next generation of semiconductor devices & microelectronics in sectors such as power grid, aerospace & defense electronics, EV, datacenters, power electronics, and sustainable energy solutions. Through continuous innovation and strategic partnerships, Nitride Global is committed to pushing the boundaries of performance while building a more sustainable, energy-efficient future.
About USLLC
United Semiconductors LLC (USLLC) is a U.S.-based, woman-owned small business specializing in the design, growth, and processing of advanced III–V compound semiconductor materials. Founded in 2005 and headquartered in Los Alamitos, California, USLLC provides crystal growth and wafer fabrication solutions for defense, aerospace, and high-performance electronics applications. The company is pioneering in-space manufacturing technologies to enable next-generation semiconductor substrates with superior performance and scalability.
About Axiom Space
Axiom Space is building the world’s first commercial space station – Axiom Station. Serving as a cornerstone for sustained human presence in space, this next-generation orbital platform fosters groundbreaking innovation and research in microgravity, and cultivates the vibrant, global space economy of tomorrow. Today, driven by the vision of leading humanity's journey off planet, Axiom Space is the principal provider of commercial human spaceflight services to the International Space Station and developer of advanced spacesuits for the Moon and low-Earth orbit. Axiom Space is building era-defining space infrastructure that will empower our civilization to transcend Earth for the benefit of every human, everywhere.
Inquiries:
Brian J. Soller, President
Nitride Global, Inc.
Email: bsoller@nitrideglobal.com
Nitride Global Awarded AFWERX Direct-to-Phase II SBIR to Advance Revolutionary Substrate Platform for Next-Generation Power Electronics
Wichita, Kansas, USA — December 3, 2025 — Nitride Global is proud to announce being awarded a Direct-to-Phase II SBIR by AFWERX. Please see below for the link to the press release. This contract advances NGI’s revolutionary AlON advanced packaging and thermal management substrate technology, a next-generation solution that enables unprecedented levels of power density, thermal performance, and functional integration for modern aerospace & defense systems and a variety of commercial use cases. This release highlights how this technology will support high-power RF, directed energy, quantum guidance systems, and other Department of the Air Force priority areas.
Inquiries:
Brian J. Soller, President
Nitride Global, Inc.
Email: bsoller@nitrideglobal.com
Nitride Global Inc. and STi Co., Ltd. Sign Strategic Memorandum of Agreement to Advance Aluminum Oxynitride (AlON) Coating Technology
Wichita, Kansas, USA & Anseong, Gyeonggi-do, South Korea — June 4, 2025 — Nitride Global Inc. (NGI), a U.S.-based global leader in advanced materials development in the semiconductor and microelectronics industry and STi Co., Ltd., a global provider of core equipment for the semiconductor and display sectors, have entered into a Memorandum of Agreement to collaborate on the commercialization of Nitride Global’s AlON-based revolutionary advanced packaging, dielectric & thermal management technology. The agreement outlines a shared vision for deploying solutions across various markets.
Under the agreement, the two companies will jointly develop a roadmap for the manufacturing and commercial deployment of AlON coatings, a transformative thin-film technology enabling a new set of capabilities and device architectures in applications such as power electronics including electric drive modules, aerospace & defense electronics, high power laser & optical, thermoelectric cooler, 2.5D and 3D advanced packaging applications, and in high-performance and quantum computing. This is enabled by the superior thermal management, electrical isolation, and reliability characteristics of the AlON technology. The partnership leverages NGI’s proprietary AlON composition, deposition technology (in partnership with Fraunhofer Institute FEP) and application expertise, alongside STi’s proven manufacturing strengths and vacuum deposition systems.
“This partnership marks a major step forward in bringing transformative materials like AlON to global markets,” said Brian Soller, President of Nitride Global. “By working with a world-class manufacturer like STi, we’re laying the groundwork for scalable production and widespread adoption of AlON-based solutions.”
Key terms of the agreement include:
Nitride Global will provide technical leadership and market insights and take the lead in global commercialization efforts.
STi will support the development of industrial-scale deposition equipment required to meet the growing demand for AlON-based thermal management solutions and will retain certain rights for distribution in the Korean market.
“We are excited to bring our manufacturing strengths to this partnership,” said Mr. Lee, Chief Executive Officer of STi Co., Ltd “Together with NGI, we’re committed to pioneering new materials that enable the next generation of electronic devices.”
This partnership reflects a shared commitment to innovation, scalability, and leadership in the global advanced materials ecosystem.
About Nitride Global
Founded in 2021, Nitride Global (nitrideglobal.com) is an advanced materials innovator specializing in ultrawide bandgap materials with its ultra-high-purity aluminum nitride boules, and advanced packaging solutions with its revolutionary and patented aluminum oxynitride technology. Its cutting-edge solutions are designed to enable the next generation of semiconductor devices & microelectronics in sectors such as power grid, aerospace & defense electronics, EV, datacenters, power electronics, and sustainable energy solutions. Through continuous innovation and strategic partnerships, Nitride Global is committed to pushing the boundaries of performance while building a more sustainable, energy-efficient future.
About STi
Founded in 1997, STi Co., Ltd. (sti.co.kr) is a global supplier of core semiconductor and display manufacturing equipment, including Central Chemical Supply Systems (CCSS), wet processing systems, and advanced inkjet printing solutions. Headquartered in Anseong, South Korea, STi supports major global semiconductor leaders through its R&D-driven approach, robust overseas network, and commitment to localized, high-performance technologies that enable next-generation electronics.
Inquiries:
Brian J. Soller, President
Nitride Global, Inc.
Email: bsoller@nitrideglobal.com
Nitride Global Selected for Prestigious Plug and Play Semiconductor Accelerator Program
Wichita, KS — May 5, 2025 — Nitride Global, a leader in advanced materials in the semiconductor & microelectronics industry, is proud to announce its acceptance into the Plug and Play Semiconductor Accelerator Program. Out of more than 600 applicants, Nitride Global was selected as one of only 20 standout companies chosen to participate in this year’s prestigious cohort, recognized for driving the future of semiconductor innovation. Nitride Global focuses on next generation advanced materials in the areas of Ultrawide Bandgap (UWBG) semiconductors with its highly differentiated bulk Aluminum Nitride (AlN) products, and a revolutionary advanced packaging solution based on its proprietary Aluminum Oxynitride (AlON), a transformative thermal management, dielectric, and passivation coating for use in power electronics and 3D packaging.
Throughout this program, Nitride Global will gain access to vital resources, including specialized workshops, expert mentorship, business development opportunities, potential investment connections, and the opportunity to collaborate with other cohort startups. The program culminates in a high-profile Expo Day on October 23, 2025, where Nitride Global will present its cutting-edge technologies to an elite audience of corporate partners, investors, and industry leaders at Plug and Play’s NeoCity facility in Osceola County, Florida, an emerging hub for semiconductor innovation and economic growth.
“Being selected for Plug and Play’s Semiconductor Program is a prestigious and transformative opportunity for Nitride Global,” said Mahyar Khosravi, CEO of Nitride Global. “Our innovations in UWBG materials and next-generation advanced packaging technologies are redefining thermal management, substrate performance, and energy efficiency for next-generation electronic systems. We look forward to leveraging this opportunity to accelerate our impact on the semiconductor, aerospace, datacenter, electric vehicle, and sustainable energy sectors.”
Nitride Global’s portfolio includes:
Ultra-high-purity bulk Aluminum Nitride (AlN): Delivering ultrawide bandgap performance, high thermal conductivity, exceptional voltage resistance, and extreme durability for next-generation semiconductor and UV optical devices. AlN’s superior material properties enable faster heat conduction, lower switching losses, and greater reliability in high-power, high-frequency, and high-temperature applications such as EVs, datacenter, aerospace, and the power grid.
Revolutionary Aluminum Oxynitride (AlON) Coatings: Transforming semiconductor and power electronics performance with a proprietary thin-film solution that dramatically improves heat dissipation, electrical isolation, and device longevity. AlON coatings enable direct die-attach architectures, eliminating the need for thermal interface and adhesion layers, thereby reducing thermal resistance and lowering weight and size, and extending device life by reducing thermal degradation. It accelerates innovation in electric vehicles, microelectronics, aerospace, and next-generation RF and optical systems. NGI is establishing the first of its kind capabilities in the US in the area of advanced packaging.
As one of only four companies in the world and the only North American-owned entity in the bulk AlN space, Nitride Global is establishing fully domestic capabilities in semiconductor innovation, addressing supply chain security, and reducing global carbon footprints across sectors such as electric vehicles, aerospace, and power grids.
“Plug and Play represents a unique platform to collaborate and scale transformational technologies,” added Dr. Brian Soller, President of Nitride Global. “We are excited to work alongside industry innovators and pioneers to drive the next wave of semiconductor performance and sustainability.”
About Nitride Global
Founded in 2009, Nitride Global (www.nitrideglobal.com) is an advanced materials innovator specializing in UWBG & advanced packaging solutions. Its cutting-edge technologies are designed to enable the next generation of semiconductor devices, power electronics, and sustainable energy solutions. Through continuous innovation and strategic partnerships, Nitride Global is committed to pushing the boundaries of performance while building a more sustainable, energy-efficient future.
About Plug and Play
Plug and Play is the leading innovation platform, connecting startups, corporations, venture capital firms, universities, and government agencies. Headquartered in Silicon Valley, they are present in 60+ locations across five continents. They offer corporate innovation programs and help corporate partners in every stage of their innovation journey, from education to execution. They also organize startup acceleration programs and have built an in-house VC to drive innovation across multiple industries where they’ve invested in hundreds of successful companies, including Dropbox, Guardant Health, Honey, Lending Club, N26, PayPal, and Rappi. For more information, visit https://www.plugandplaytechcenter.com/.
Inquiries:
Brian J. Soller, President
Nitride Global, Inc.
Email: bsoller@nitrideglobal.com
Nitride Global Presents Latest Advancements in Aluminum Oxynitride Coatings at PSE ‘24
In partnership with Fraunhofer FEP, Nitride Global is advancing Aluminum Oxynitride (AlON) substrate technology to set a new industry benchmark.
Partnership with Fraunhofer FEP yields groundbreaking results
(Wichita, KS, September 2, 2024) – Nitride Global, Inc., a global leader in Aluminum Nitride technology, today announced its latest advancements in collaboration with the Fraunhofer Institute for Electron Beam and Plasma Technology (FEP) at the 19th International Conference on Plasma Surface Engineering (PSE ’24), held in Erfurt, Germany. The presentation, titled “Sputter Deposited Aluminum Oxynitride Films for Applications as Electrically Isolating, Thermally Conductive Films,” highlighted cutting-edge developments in aluminum oxynitride (AlON) coatings, offering groundbreaking potential for the semiconductor and power electronics industries.
The presentation detailed how AlON films, a hybrid substrate material, offer significant advantages across a range of applications, including power electronics, laser diodes, electronic cooling, and semiconductor manufacturing. By fine-tuning the composition of AlON between pure Aluminum Nitride (AlN) and Aluminum Oxide (Al₂O₃), Nitride Global has created an optimized substrate that delivers superior electrical isolation, high thermal conductivity, excellent adhesion, and minimal stress on copper substrates.
“Our advancements in AlON coatings represent a significant leap forward for semiconductor devices and power electronics,” said Mahyar Khosravi, CEO of Nitride Global. “AlON’s unique combination of electrical isolation, adhesion, coefficient of thermal expansion (CTE) matching, and durability positions it as the ideal candidate to replace conventional Direct Bonded Copper (DBC) and Active Metal Brazed (AMB) materials in next-generation systems. We are incredibly proud of these results and our collaboration with Fraunhofer FEP.”
The collaboration between Nitride Global, Inc. and Fraunhofer FEP leverages Nitride Global’s expertise in advanced materials with Fraunhofer FEP’s cutting-edge magnetron sputtering deposition technology. This partnership has resulted in a highly manufacturable, production-ready substrate material that sets a new standard for performance in critical electronics applications.
About Nitride Global
Nitride Global is a leading innovator in the development and commercialization of advanced aluminum nitride boules and templates and a revolutionary thermal management and passivation coating technology based on aluminum oxynitride. The company’s cutting-edge solutions are used in a variety of high-performance applications in semiconductor manufacturing and packaging across various sectors, such as power electronics, microelectronics, EVs, photonics, aerospace, and renewable energy. With a focus on quality, performance, and innovation, Nitride Global is committed to driving advancements in materials science and delivering value to its customers globally.
About Fraunhofer Institute for Electron Beam and Plasma Technology (FEP)
Fraunhofer FEP is a world-renowned research institute specializing in electron beam and plasma technology, with a focus on innovative surface coatings, materials, and plasma systems.
Inquiries:
Brian J. Soller, President
Nitride Global, Inc.
Email: bsoller@nitrideglobal.com
Nitride Global to Partner on NASA Contract to Grow Aluminum Nitride Crystals in Space
Nitride Global is pleased to share that we are collaborating with United Semiconductor and Axiom Space on a NASA Small Business Innovation Research (SBIR)-funded project to advance in-space manufacturing of aluminum nitride single crystals.
Industry leaders team up to develop next-generation crystal growth capability
(Wichita, KS, August 6, 2024) – Nitride Global, a leader in Aluminum Nitride technology, today announced that it will partner with United Semiconductor, LLC and Axiom Space on a NASA-funded Small Business Innovation Research (SBIR) grant titled Physical vapor deposition reactor design and validation for in-space manufacturing of aluminum nitride single crystals. The contract is set aside for small businesses that support the development of innovative technologies with potential aerospace applications.
The consortium, led by United Semiconductor, a manufacturer of advanced semiconductor materials, will work on designing and validating a physical vapor deposition reactor for producing high-quality aluminum nitride single crystals in a microgravity environment. This aligns with NASA's interest in in-space manufacturing capabilities that could enable novel materials and devices for autonomous systems, networked sensing, and other emerging aerospace technologies.
“We are thrilled to partner with United Semiconductor and Axiom Space on this groundbreaking project supported by NASA’s SBIR program,” said Mahyar Khosravi, CEO of Nitride Global. “The development of in-space manufacturing technologies for aluminum nitride single crystals represents a major leap forward for both aerospace and semiconductor industries. At Nitride Global, we have always been at the forefront of Aluminum Nitride innovation, and this collaboration will enable us to explore new frontiers in materials science while contributing to NASA’s mission of advancing autonomous systems and networked sensing in space. This partnership underscores our commitment to pushing the boundaries of what’s possible in advanced semiconductor materials.”
The contract award is in the form of a Phase I SBIR and is expected to fund the collaboration for one year, with possible follow-on funding should the program show early success.
About Nitride Global
Nitride Global is a leading innovator in the development and commercialization of advanced aluminum nitride boules and templates and a revolutionary thermal management and passivation coating technology based on aluminum oxynitride. The company’s cutting-edge solutions are used in a variety of high-performance applications in semiconductor manufacturing and packaging across various sectors, such as power electronics, microelectronics, EVs, photonics, aerospace, and renewable energy. With a focus on quality, performance, and innovation, Nitride Global is committed to driving advancements in materials science and delivering value to its customers globally.
Inquiries:
Brian J. Soller, President
Nitride Global, Inc.
Email: bsoller@nitrideglobal.com
Nitride Global Appoints Dr. Brian Soller as President
Nitride Global, a leader in advanced materials development and manufacturing focused on Aluminum Nitride (AlN), Aluminum Oxynitride (AlON), and their derivative materials and solutions, is pleased to announce the appointment of Dr. Brian J. Soller as its new President.
Industry Veteran Brings Over 20 Years of Experience to Drive Innovation and Growth
(Wichita, KS, August 1, 2024) – Nitride Global, a leader in advanced materials development and manufacturing focused on Aluminum Nitride (AlN), Aluminum Oxynitride (AlON), and their derivative materials and solutions, is pleased to announce the appointment of Dr. Brian J. Soller as its new President. Dr. Soller, a seasoned leader with extensive experience in the photonics, advanced materials, and instrumentation sectors, will lead Nitride Global’s strategic initiatives to accelerate innovation, expand its global footprint, and strengthen its position as an industry leader.
Dr. Soller joins Nitride Global with more than two decades of experience in senior leadership roles. Most recently, he served as CTO and EVP of Corporate Development at Luna Innovations, where he spearheaded the company’s growth initiatives and played a pivotal role in developing high-performance laser and fiber-optic technologies for a wide range of industrial applications. His deep technical expertise and proven leadership in scaling companies will be key assets to Nitride Global as it enters a new phase of growth.
“We are thrilled to welcome Dr. Soller as President,” said Mahyar Khosravi, Executive Chairman of Nitride Global. “His exceptional track record of leadership and innovation in advanced technologies aligns perfectly with Nitride Global’s vision of delivering cutting-edge solutions to meet the evolving needs of our customers. Brian’s insights and expertise will drive our efforts in advancing the capabilities of aluminum nitride products and expand into new markets.”
Dr. Soller holds a Ph.D. in Optics from the University of Rochester and a Bachelor’s degree in Mathematics and Physics from the University of Wisconsin-LaCrosse. He is a well-regarded expert in his field, having authored numerous technical papers and patents related to integrated optics, fiber optic sensors, and other high-performance technologies.
“I am honored to join Nitride Global at such an exciting time,” said Dr. Soller. “The company’s commitment to innovation and its position at the forefront of aluminum nitride-based technologies are inspiring. I look forward to working with the talented team to build on Nitride Global’s impressive achievements and lead the company into its next chapter of growth.”
Under Dr. Soller’s leadership, Nitride Global aims to continue its pioneering work in developing materials that enable breakthroughs in sectors such as semiconductor manufacturing, aerospace, and energy. His appointment is expected to strengthen Nitride Global’s commercial capabilities and expand its strategic partnerships worldwide.
About Nitride Global
Nitride Global is a leading innovator in the development and commercialization of advanced aluminum nitride boules and templates and a revolutionary thermal management and passivation coating technology based on aluminum oxynitride. The company’s cutting-edge solutions are used in a variety of high-performance applications in semiconductor manufacturing and packaging across various sectors, such as power electronics, microelectronics, EVs, photonics, aerospace, and renewable energy. With a focus on quality, performance, and innovation, Nitride Global is committed to driving advancements in materials science and delivering value to its customers globally.
Inquiries:
Mahyar Khosravi, Executive Chairman
Nitride Global, Inc.
Email: mkhosravi@nitrideglobal.com